• Xiaokai Chen，Xiaoyu Xuan，Wanlin Guo*，Zhuhua Zhang*

• Nano Lett.（IF:9.6）,Published December 19, 2025

Abstract
Altermagnetism is characterized by alternating spin polarizations in both real and reciprocal spaces in a single physical state of material. Here, we introduce the physical state as a new degree of freedom and propose a theory by symmetry analysis for achieving alternating spin polarizations across two equivalent states in two-dimensional systems, which we term cross-state alternating magnetism (cs-AM). We validate the feasibility of cs-AM with a tight-binding model, showing that the requisite state transition for switching spin polarizations can be realized in altermagnets and even fully compensated ferrimagnets, via the flipping of a vertical electric polarization. Ab initio calculations demonstrate half-metallic cs-AM in a Lu3N2O2 bilayer via interlayer sliding as well as a spin-valley locked altermagnetic state in a Cr2SeO bilayer under an applied electric field. Moreover, our theory can be extended to achieve cascaded manipulation of a series of alternating spin polarizations across different symmetry-connected state pairs by, for example, the joint action of interlayer stacking and intrinsic ferroelectricity.

https://doi.org/10.1021/acs.nanolett.5c04949